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| IRFF230 2N6798 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200) typ. * V(BR)DSS = 200V * ID = 5.5A * RDSON = 0.40 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2.54 (0.100) 3 45 TO-39 PACKAGE (TO-205AF) Underside View PIN 1 - Source PIN 2 - Gate PIN 3 - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) Drain-Source Voltage Gate-Source Voltage Drain Current Continuous TCase = 25C TCase = 100C IDM Drain Current Pulsed PD Total Device Dissipation @ TCase = 25C TCase = 100C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RJC Thermal Resistance Junction to Case RJA Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.6mm from Case for 10 secs. VDS VGS ID 200V 20V 5.5A 3.5A 22A 25W 10W -55 to +150C 5.0C/W 175C/W 300C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3096 Issue 3 IRFF230 2N6798 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter V(BR)DSS VGS(th) IGSS IDSS rDS(on) gfs Ciss Coss Crss tdon tr td(of) tf VSD IS ISM trr Qrr Drain-Source Breakdown Voltage Gate Thresshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance1 Forward Transconductance1 Input Capacitance Output capacitance Reverse Transfer Capacitance Turn-On Delay Time RiseTime Turn off Delay Time FallTime ID = 3.5A Test Conditions VGS = 0 VDS=VGS VDS = 0 VGS = 0 VGS = 10V VDS = 15V VDS = 25V ID = 1mA ID = 250A VGS = 20V Tj = 125C ID = 3.5A ID = 3.5A VGS = 0 Min. 200 2.0 Typ. Max. Unit 4.0 100 25 250 V nA A s( ) pF 30 50 50 40 1.4 5.5 22 V A ns C ns VDS =0.8 x V(BR)DSS 0.25 2.5 3.0 600 250 80 8 42 12 30 IF = 5.5A VGS = 0 0.4 f = 1.0MHZ VDD = 77V RL = 22 VGEN = 10V RG = 7.5 ohms SOURCE DRAIN DIODE RATING CHARACTERISTICS Diode Forward Voltage1 Continues Current Pulsed Current2 IF = 5.5A VDD = 50V 150 dIF/DT = 100A/S Reverse Recovery Time Reverse Recovered Charge 500 6 1) Pulse test : Pulse Width < 300s ,Duty Cycle < 2% 2) Pulse width limited by maximum juction temperature Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3096 Issue 3 |
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